Diodes Incorporated Việt Nam | Diodes Incorporated DMG6601LVT-7

DMG6601LVT-7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer

Diodes Incorporated

Product description

MOSFET N/P-CH 30V 3.8A TSOT26

Manufacturer Product Number

DMG6601LVT-7

Detailed description

Mosfet Array 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26

Datasheet

https://www.diodes.com/assets/Datasheets/DMG6601LVT.pdf Datasheet

Product Attributes

Select all 		Type Description
Manufacturer Diodes Incorporated
Series -
Package Tape & Reel (TR)
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.8A, 2.5A
Rds On (Max) @ Id, Vgs 55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 422pF @ 15V
Power - Max 850mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26

Environmental and Export Classifications

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
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Tape & Reel (TR)

QUANTITY UNIT PRICE EXT PRICE
Box Icon 1 13,051 13,051
Package Icon Manufacturers Standard Package

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